Siemens Inverter

VOLTAGE 
-Sic can sustain almost 10x higher voltage compared to Silicon
-Higher reliability and lower complexity
TEMPERATURE 
-SiC can operate at temperatures above 200C.
-Compared to a maximum of 150C for Si-based IGBT
THERMAL CONDUCTIVITY 
-More than 3 times higher thermal conductivity compared to Si.
-Very important for the cooling and long life of components
SWITCHING SPEED 
-SiC devices can switch 10x faster compared to Si IGBT
-Possible to use higher switching frequency and hence lower losses
BAND GAP 
-SiC has a higher band gap compared to Si
-Allows to operate efficiently at high voltages with lower leakage currents.